N-Channel MOSFET, 25 A, 40 V, 8-Pin PowerPAK ChipFET Vishay SI5448DU-T1-GE3

RS kodas: 134-9156Gamintojas: VishayGamintojo kodas: SI5448DU-T1-GE3
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Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

40 V

Pakuotės tipas

PowerPAK ChipFET

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

9.47 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

31 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V

Ilgis

3mm

Typical Gate Charge @ Vgs

26.2 nC @ 10 V

Plotis

1.9mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Aukštis

0.8mm

Serija

TrenchFET

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Produkto aprašymas

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Patikrinkite dar kartą.

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€ 0,274

Each (On a Reel of 3000) (be PVM)

€ 0,332

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 25 A, 40 V, 8-Pin PowerPAK ChipFET Vishay SI5448DU-T1-GE3
sticker-462

€ 0,274

Each (On a Reel of 3000) (be PVM)

€ 0,332

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 25 A, 40 V, 8-Pin PowerPAK ChipFET Vishay SI5448DU-T1-GE3
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

25 A

Maximum Drain Source Voltage

40 V

Pakuotės tipas

PowerPAK ChipFET

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

9.47 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

31 W

Transistor Configuration

Single

Maximum Gate Source Voltage

+20 V

Ilgis

3mm

Typical Gate Charge @ Vgs

26.2 nC @ 10 V

Plotis

1.9mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Aukštis

0.8mm

Serija

TrenchFET

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Produkto aprašymas

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more