Dual P-Channel MOSFET, 3.1 A, 60 V, 8-Pin SOIC Vishay SI4948BEY-T1-GE3

RS kodas: 787-9008Gamintojas: VishayGamintojo kodas: SI4948BEY-T1-GE3
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Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.1 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SOIC

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.4 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+175 °C

Ilgis

5mm

Typical Gate Charge @ Vgs

14.5 nC @ 10 V

Plotis

4mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

1.5mm

Produkto aprašymas

Dual P-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 1,522

Each (In a Pack of 5) (be PVM)

€ 1,842

Each (In a Pack of 5) (su PVM)

Dual P-Channel MOSFET, 3.1 A, 60 V, 8-Pin SOIC Vishay SI4948BEY-T1-GE3
Pasirinkite pakuotės tipą
sticker-462

€ 1,522

Each (In a Pack of 5) (be PVM)

€ 1,842

Each (In a Pack of 5) (su PVM)

Dual P-Channel MOSFET, 3.1 A, 60 V, 8-Pin SOIC Vishay SI4948BEY-T1-GE3
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
5 - 45€ 1,522€ 7,61
50 - 245€ 1,312€ 6,56
250 - 495€ 1,048€ 5,24
500 - 1245€ 0,87€ 4,35
1250+€ 0,796€ 3,98

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.1 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SOIC

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

150 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2.4 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+175 °C

Ilgis

5mm

Typical Gate Charge @ Vgs

14.5 nC @ 10 V

Plotis

4mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

1.5mm

Produkto aprašymas

Dual P-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more