N-Channel MOSFET, 10 A, 40 V, 8-Pin SOIC Vishay SI4840BDY-T1-GE3
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
40 V
Pakuotės tipas
SOIC
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.56 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
18.5 nC @ 5 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
5mm
Plotis
4mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
1.55mm
Produkto aprašymas
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 2,048
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 2,478
Už kiekviena vnt. (tiekiama riteje) (su PVM)
5
€ 2,048
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 2,478
Už kiekviena vnt. (tiekiama riteje) (su PVM)
5
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 5 - 45 | € 2,048 | € 10,24 |
| 50 - 120 | € 1,942 | € 9,71 |
| 125 - 245 | € 1,732 | € 8,66 |
| 250 - 495 | € 1,628 | € 8,14 |
| 500+ | € 1,522 | € 7,61 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
40 V
Pakuotės tipas
SOIC
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
1.56 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
18.5 nC @ 5 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
5mm
Plotis
4mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
1.55mm
Produkto aprašymas
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products