Dual N/P-Channel-Channel MOSFET, 4.3 A, 6 A, 30 V, 8-Pin SOIC Vishay SI4532CDY-T1-GE3
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N, P
Maximum Continuous Drain Current
4.3 A, 6 A
Maximum Drain Source Voltage
30 V
Pakuotės tipas
SOIC
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
65 mΩ, 140 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.78 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+150 °C
Ilgis
5mm
Typical Gate Charge @ Vgs
6 nC @ 10 V, 7.8 nC @ 10 V
Plotis
4mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
1.5mm
Produkto aprašymas
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 0,633
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 0,766
Už kiekviena vnt. (tiekiama riteje) (su PVM)
20
€ 0,633
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 0,766
Už kiekviena vnt. (tiekiama riteje) (su PVM)
20
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 20 - 180 | € 0,633 | € 12,66 |
| 200 - 480 | € 0,538 | € 10,75 |
| 500 - 980 | € 0,508 | € 10,16 |
| 1000 - 1980 | € 0,475 | € 9,49 |
| 2000+ | € 0,444 | € 8,88 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N, P
Maximum Continuous Drain Current
4.3 A, 6 A
Maximum Drain Source Voltage
30 V
Pakuotės tipas
SOIC
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
65 mΩ, 140 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.78 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+150 °C
Ilgis
5mm
Typical Gate Charge @ Vgs
6 nC @ 10 V, 7.8 nC @ 10 V
Plotis
4mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
1.5mm
Produkto aprašymas
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products