Dual N/P-Channel MOSFET, 3 A, 3.7 A, 30 V, 8-Pin SOIC Vishay SI4532ADY-T1-E3

RS Stock No.: 710-4720Brand: VishayManufacturers Part No.: SI4532ADY-T1-E3
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Technical Document

Specifications

Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

3 A, 3.7 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

53 mΩ, 80 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.13 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Transistor Material

Si

Typical Gate Charge @ Vgs

10 nC @ 10 V, 8 nC @ 10 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

5mm

Minimum Operating Temperature

-55 °C

Height

1.55mm

Product details

Dual N/P-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Stock information temporarily unavailable.

€ 6.72

€ 0.672 Each (In a Pack of 10) (Exc. Vat)

€ 8.13

€ 0.813 Each (In a Pack of 10) (inc. VAT)

Dual N/P-Channel MOSFET, 3 A, 3.7 A, 30 V, 8-Pin SOIC Vishay SI4532ADY-T1-E3
Select packaging type
sticker-462

€ 6.72

€ 0.672 Each (In a Pack of 10) (Exc. Vat)

€ 8.13

€ 0.813 Each (In a Pack of 10) (inc. VAT)

Dual N/P-Channel MOSFET, 3 A, 3.7 A, 30 V, 8-Pin SOIC Vishay SI4532ADY-T1-E3
Stock information temporarily unavailable.
Select packaging type
sticker-462

Stock information temporarily unavailable.

Please check again later.

QuantityUnit pricePer Pack
10 - 40€ 0.672€ 6.72
50 - 90€ 0.659€ 6.59
100 - 240€ 0.515€ 5.15
250 - 490€ 0.50€ 5.00
500+€ 0.426€ 4.26

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Technical Document

Specifications

Brand

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

3 A, 3.7 A

Maximum Drain Source Voltage

30 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

53 mΩ, 80 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1.13 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Width

4mm

Transistor Material

Si

Typical Gate Charge @ Vgs

10 nC @ 10 V, 8 nC @ 10 V

Number of Elements per Chip

2

Maximum Operating Temperature

+150 °C

Length

5mm

Minimum Operating Temperature

-55 °C

Height

1.55mm

Product details

Dual N/P-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in