N-Channel MOSFET, 18 A, 100 V, 8-Pin SOIC Vishay SI4190ADY-T1-GE3

RS kodas: 787-9235PGamintojas: VishayGamintojo kodas: SI4190ADY-T1-GE3
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Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

SOIC

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

2.2 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

5mm

Typical Gate Charge @ Vgs

44.4 nC @ 10 V

Plotis

4mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

1.5mm

Produkto aprašymas

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 0,762

Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 0,922

Už kiekviena vnt. (tiekiama riteje) (su PVM)

N-Channel MOSFET, 18 A, 100 V, 8-Pin SOIC Vishay SI4190ADY-T1-GE3
Pasirinkite pakuotės tipą
sticker-462

€ 0,762

Už kiekviena vnt. (tiekiama riteje) (be PVM)

€ 0,922

Už kiekviena vnt. (tiekiama riteje) (su PVM)

N-Channel MOSFET, 18 A, 100 V, 8-Pin SOIC Vishay SI4190ADY-T1-GE3
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

SOIC

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

2.2 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1.5V

Maximum Power Dissipation

6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

5mm

Typical Gate Charge @ Vgs

44.4 nC @ 10 V

Plotis

4mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

1.5mm

Produkto aprašymas

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more