Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
9.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
15.4 nC @ 10 V, 7.3 nC @ 4.5 V
Width
4mm
Height
1.5mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 7.13
€ 0.713 Each (In a Pack of 10) (Exc. Vat)
€ 8.63
€ 0.863 Each (In a Pack of 10) (inc. VAT)
Standard
10

€ 7.13
€ 0.713 Each (In a Pack of 10) (Exc. Vat)
€ 8.63
€ 0.863 Each (In a Pack of 10) (inc. VAT)
Stock information temporarily unavailable.
Standard
10

Stock information temporarily unavailable.
| Quantity | Unit price | Per Pack |
|---|---|---|
| 10 - 90 | € 0.713 | € 7.13 |
| 100 - 240 | € 0.67 | € 6.70 |
| 250 - 490 | € 0.606 | € 6.06 |
| 500 - 990 | € 0.572 | € 5.72 |
| 1000+ | € 0.534 | € 5.34 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
9.9 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
5mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
15.4 nC @ 10 V, 7.3 nC @ 4.5 V
Width
4mm
Height
1.5mm
Minimum Operating Temperature
-55 °C
Country of Origin
China
Product details


