N-Channel MOSFET, 9.9 A, 30 V, 8-Pin SOIC Vishay Si4134DY-T1-GE3
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
9.9 A
Maximum Drain Source Voltage
30 V
Pakuotės tipas
SOIC
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maksimali darbinė temperatūra
+150 °C
Ilgis
5mm
Plotis
4mm
Typical Gate Charge @ Vgs
15.4 nC @ 10 V, 7.3 nC @ 4.5 V
Number of Elements per Chip
1
Minimali darbinė temperatūra
-55 °C
Aukštis
1.5mm
Kilmės šalis
China
Produkto aprašymas
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 0,803
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 0,972
Už kiekviena vnt. (tiekiama riteje) (su PVM)
10
€ 0,803
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 0,972
Už kiekviena vnt. (tiekiama riteje) (su PVM)
10
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 10 - 90 | € 0,803 | € 8,03 |
| 100 - 240 | € 0,755 | € 7,55 |
| 250 - 490 | € 0,684 | € 6,84 |
| 500 - 990 | € 0,644 | € 6,44 |
| 1000+ | € 0,604 | € 6,04 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
9.9 A
Maximum Drain Source Voltage
30 V
Pakuotės tipas
SOIC
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
8
Maximum Drain Source Resistance
14 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Maksimali darbinė temperatūra
+150 °C
Ilgis
5mm
Plotis
4mm
Typical Gate Charge @ Vgs
15.4 nC @ 10 V, 7.3 nC @ 4.5 V
Number of Elements per Chip
1
Minimali darbinė temperatūra
-55 °C
Aukštis
1.5mm
Kilmės šalis
China
Produkto aprašymas
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products