N-Channel MOSFET, 12.7 A, 25 V, 8-Pin SOIC Vishay SI4116DY-T1-GE3

RS kodas: 710-3317Gamintojas: VishayGamintojo kodas: SI4116DY-T1-GE3
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Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

12.7 A

Maximum Drain Source Voltage

25 V

Pakuotės tipas

SOIC

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

5mm

Plotis

4mm

Transistor Material

Si

Typical Gate Charge @ Vgs

17.5 nC @ 4.5 V, 37 nC @ 10 V

Minimali darbinė temperatūra

-55 °C

Aukštis

1.55mm

Kilmės šalis

China

Produkto aprašymas

N-Channel MOSFET, 8V to 25V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 1,312

Each (In a Pack of 5) (be PVM)

€ 1,588

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 12.7 A, 25 V, 8-Pin SOIC Vishay SI4116DY-T1-GE3
Pasirinkite pakuotės tipą
sticker-462

€ 1,312

Each (In a Pack of 5) (be PVM)

€ 1,588

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 12.7 A, 25 V, 8-Pin SOIC Vishay SI4116DY-T1-GE3
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
5 - 45€ 1,312€ 6,56
50 - 245€ 1,26€ 6,30
250 - 495€ 1,102€ 5,51
500 - 1245€ 1,05€ 5,25
1250+€ 0,996€ 4,98

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

12.7 A

Maximum Drain Source Voltage

25 V

Pakuotės tipas

SOIC

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

9 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-12 V, +12 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

5mm

Plotis

4mm

Transistor Material

Si

Typical Gate Charge @ Vgs

17.5 nC @ 4.5 V, 37 nC @ 10 V

Minimali darbinė temperatūra

-55 °C

Aukštis

1.55mm

Kilmės šalis

China

Produkto aprašymas

N-Channel MOSFET, 8V to 25V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more