P-Channel MOSFET, 8 A, 20 V, 6-Pin TSOP-6 Vishay SI3493DDV-T1-GE3
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
20 V
Pakuotės tipas
TSOP-6
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
51 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
3.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Plotis
1.7mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
3.1mm
Typical Gate Charge @ Vgs
34.8 nC @ 8 V
Aukštis
1mm
Serija
TrenchFET
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Produkto aprašymas
P-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 0,192
Each (On a Reel of 3000) (be PVM)
€ 0,232
Each (On a Reel of 3000) (su PVM)
3000
€ 0,192
Each (On a Reel of 3000) (be PVM)
€ 0,232
Each (On a Reel of 3000) (su PVM)
3000
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 3000 - 3000 | € 0,192 | € 576,45 |
| 6000+ | € 0,183 | € 548,10 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
P
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
20 V
Pakuotės tipas
TSOP-6
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
51 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1V
Minimum Gate Threshold Voltage
0.4V
Maximum Power Dissipation
3.6 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Plotis
1.7mm
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
3.1mm
Typical Gate Charge @ Vgs
34.8 nC @ 8 V
Aukštis
1mm
Serija
TrenchFET
Minimali darbinė temperatūra
-55 °C
Forward Diode Voltage
1.2V
Produkto aprašymas
P-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products