P-Channel MOSFET, 8 A, 20 V, 6-Pin TSOP-6 Vishay SI3493BDV-T1-GE3

RS kodas: 152-6371Gamintojas: VishayGamintojo kodas: SI3493BDV-T1-GE3
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Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

20 V

Pakuotės tipas

TSOP-6

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

-0.9V

Minimum Gate Threshold Voltage

-0.4V

Maximum Power Dissipation

2.97 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Plotis

1.7mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3.1mm

Typical Gate Charge @ Vgs

29 nC @ 10 V

Aukštis

1mm

Minimali darbinė temperatūra

-55 °C

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€ 0,917

Each (In a Pack of 10) (be PVM)

€ 1,109

Each (In a Pack of 10) (su PVM)

P-Channel MOSFET, 8 A, 20 V, 6-Pin TSOP-6 Vishay SI3493BDV-T1-GE3
Pasirinkite pakuotės tipą
sticker-462

€ 0,917

Each (In a Pack of 10) (be PVM)

€ 1,109

Each (In a Pack of 10) (su PVM)

P-Channel MOSFET, 8 A, 20 V, 6-Pin TSOP-6 Vishay SI3493BDV-T1-GE3
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
10 - 90€ 0,917€ 9,17
100 - 240€ 0,862€ 8,62
250 - 490€ 0,779€ 7,79
500 - 990€ 0,734€ 7,34
1000+€ 0,688€ 6,88

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

20 V

Pakuotės tipas

TSOP-6

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

45 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

-0.9V

Minimum Gate Threshold Voltage

-0.4V

Maximum Power Dissipation

2.97 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Plotis

1.7mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3.1mm

Typical Gate Charge @ Vgs

29 nC @ 10 V

Aukštis

1mm

Minimali darbinė temperatūra

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more