N-Channel MOSFET, 4.6 A, 80 V, 6-Pin SOT-23 Vishay SI3476DV-T1-GE3

RS kodas: 152-6369Gamintojas: VishayGamintojo kodas: SI3476DV-T1-GE3
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Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

4.6 A

Maximum Drain Source Voltage

80 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

126 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

3.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Ilgis

3.1mm

Maksimali darbinė temperatūra

+150 °C

Plotis

1.7mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

4.9 nC @ 10 V

Minimali darbinė temperatūra

-55 °C

Aukštis

1mm

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€ 0,503

Each (In a Pack of 25) (be PVM)

€ 0,609

Each (In a Pack of 25) (su PVM)

N-Channel MOSFET, 4.6 A, 80 V, 6-Pin SOT-23 Vishay SI3476DV-T1-GE3
Pasirinkite pakuotės tipą
sticker-462

€ 0,503

Each (In a Pack of 25) (be PVM)

€ 0,609

Each (In a Pack of 25) (su PVM)

N-Channel MOSFET, 4.6 A, 80 V, 6-Pin SOT-23 Vishay SI3476DV-T1-GE3
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
25 - 225€ 0,503€ 12,57
250 - 600€ 0,474€ 11,84
625 - 1225€ 0,427€ 10,68
1250 - 2475€ 0,402€ 10,05
2500+€ 0,378€ 9,45

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

4.6 A

Maximum Drain Source Voltage

80 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

126 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

3V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

3.6 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Ilgis

3.1mm

Maksimali darbinė temperatūra

+150 °C

Plotis

1.7mm

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

4.9 nC @ 10 V

Minimali darbinė temperatūra

-55 °C

Aukštis

1mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more