P-Channel MOSFET, 4 A, 20 V, 6-Pin TSOP6 Vishay SI3443DDV-T1-GE3
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
20 V
Pakuotės tipas
TSOP6
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
-1.5V
Minimum Gate Threshold Voltage
-0.6V
Maximum Power Dissipation
2.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Maksimali darbinė temperatūra
+150 °C
Ilgis
3.1mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Plotis
1.7mm
Number of Elements per Chip
1
Minimali darbinė temperatūra
-55 °C
Aukštis
1mm
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€ 0,032
Each (On a Reel of 3000) (be PVM)
€ 0,039
Each (On a Reel of 3000) (su PVM)
3000
€ 0,032
Each (On a Reel of 3000) (be PVM)
€ 0,039
Each (On a Reel of 3000) (su PVM)
3000
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
P
Maximum Continuous Drain Current
4 A
Maximum Drain Source Voltage
20 V
Pakuotės tipas
TSOP6
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
90 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
-1.5V
Minimum Gate Threshold Voltage
-0.6V
Maximum Power Dissipation
2.7 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Maksimali darbinė temperatūra
+150 °C
Ilgis
3.1mm
Typical Gate Charge @ Vgs
20 nC @ 10 V
Plotis
1.7mm
Number of Elements per Chip
1
Minimali darbinė temperatūra
-55 °C
Aukštis
1mm
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products