P-Channel MOSFET, 3.5 A, 20 V, 3-Pin SOT-23 Vishay SI2377EDS-T1-GE3

RS kodas: 812-3145Gamintojas: VishayGamintojo kodas: SI2377EDS-T1-GE3
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Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.5 A

Maximum Drain Source Voltage

20 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

165 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Maksimali darbinė temperatūra

+150 °C

Number of Elements per Chip

1

Ilgis

3.04mm

Typical Gate Charge @ Vgs

14 nC @ 8 V

Plotis

1.4mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

1.02mm

Kilmės šalis

China

Produkto aprašymas

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Patikrinkite dar kartą.

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€ 0,426

Each (In a Pack of 20) (be PVM)

€ 0,516

Each (In a Pack of 20) (su PVM)

P-Channel MOSFET, 3.5 A, 20 V, 3-Pin SOT-23 Vishay SI2377EDS-T1-GE3
Pasirinkite pakuotės tipą
sticker-462

€ 0,426

Each (In a Pack of 20) (be PVM)

€ 0,516

Each (In a Pack of 20) (su PVM)

P-Channel MOSFET, 3.5 A, 20 V, 3-Pin SOT-23 Vishay SI2377EDS-T1-GE3
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
20 - 180€ 0,426€ 8,53
200 - 480€ 0,324€ 6,49
500 - 980€ 0,299€ 5,98
1000 - 1980€ 0,256€ 5,12
2000+€ 0,222€ 4,43

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.5 A

Maximum Drain Source Voltage

20 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

165 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

1.8 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Maksimali darbinė temperatūra

+150 °C

Number of Elements per Chip

1

Ilgis

3.04mm

Typical Gate Charge @ Vgs

14 nC @ 8 V

Plotis

1.4mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

1.02mm

Kilmės šalis

China

Produkto aprašymas

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more