N-Channel MOSFET, 5.6 A, 40 V, 3-Pin SOT-23 Vishay SI2318CDS-T1-GE3
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
5.6 A
Maximum Drain Source Voltage
40 V
Pakuotės tipas
SOT-23
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
51 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
3.04mm
Typical Gate Charge @ Vgs
5.8 nC @ 10 V
Plotis
1.4mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
1.02mm
Produkto aprašymas
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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€ 0,403
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 0,488
Už kiekviena vnt. (tiekiama riteje) (su PVM)
20
€ 0,403
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 0,488
Už kiekviena vnt. (tiekiama riteje) (su PVM)
20
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 20 - 180 | € 0,403 | € 8,06 |
| 200 - 480 | € 0,378 | € 7,56 |
| 500 - 980 | € 0,342 | € 6,85 |
| 1000 - 1980 | € 0,322 | € 6,45 |
| 2000+ | € 0,302 | € 6,05 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
5.6 A
Maximum Drain Source Voltage
40 V
Pakuotės tipas
SOT-23
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
3
Maximum Drain Source Resistance
51 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1.2V
Maximum Power Dissipation
2.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Ilgis
3.04mm
Typical Gate Charge @ Vgs
5.8 nC @ 10 V
Plotis
1.4mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
1.02mm
Produkto aprašymas
N-Channel MOSFET, 30V to 50V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products