P-Channel MOSFET, 1.2 A, 60 V, 3-Pin SOT-23 Vishay SI2309CDS-T1-GE3

RS kodas: 710-3250Gamintojas: VishayGamintojo kodas: SI2309CDS-T1-GE3
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Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

1.2 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

345 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3.04mm

Plotis

1.4mm

Typical Gate Charge @ Vgs

2.7 nC @ 4.5 V

Transistor Material

Si

Aukštis

1.02mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 0,503

Each (In a Pack of 10) (be PVM)

€ 0,609

Each (In a Pack of 10) (su PVM)

P-Channel MOSFET, 1.2 A, 60 V, 3-Pin SOT-23 Vishay SI2309CDS-T1-GE3
Pasirinkite pakuotės tipą
sticker-462

€ 0,503

Each (In a Pack of 10) (be PVM)

€ 0,609

Each (In a Pack of 10) (su PVM)

P-Channel MOSFET, 1.2 A, 60 V, 3-Pin SOT-23 Vishay SI2309CDS-T1-GE3
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

1.2 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

345 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3.04mm

Plotis

1.4mm

Typical Gate Charge @ Vgs

2.7 nC @ 4.5 V

Transistor Material

Si

Aukštis

1.02mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more