N-Channel MOSFET, 2.6 A, 20 V, 3-Pin SOT-23 Vishay SI2302DDS-T1-GE3

RS kodas: 152-6358Gamintojas: VishayGamintojo kodas: SI2302DDS-T1-GE3
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Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.6 A

Maximum Drain Source Voltage

20 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.85V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

0.71 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Plotis

1.4mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3.04mm

Typical Gate Charge @ Vgs

3.5 nC @ 4.5 V

Aukštis

1.02mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

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€ 0,456

Each (In a Pack of 25) (be PVM)

€ 0,552

Each (In a Pack of 25) (su PVM)

N-Channel MOSFET, 2.6 A, 20 V, 3-Pin SOT-23 Vishay SI2302DDS-T1-GE3
Pasirinkite pakuotės tipą
sticker-462

€ 0,456

Each (In a Pack of 25) (be PVM)

€ 0,552

Each (In a Pack of 25) (su PVM)

N-Channel MOSFET, 2.6 A, 20 V, 3-Pin SOT-23 Vishay SI2302DDS-T1-GE3
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
25 - 225€ 0,456€ 11,39
250 - 600€ 0,429€ 10,74
625 - 1225€ 0,387€ 9,69
1250 - 2475€ 0,364€ 9,11
2500+€ 0,342€ 8,56

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.6 A

Maximum Drain Source Voltage

20 V

Pakuotės tipas

SOT-23

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

75 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.85V

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

0.71 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Plotis

1.4mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

3.04mm

Typical Gate Charge @ Vgs

3.5 nC @ 4.5 V

Aukštis

1.02mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more