Dual N/P-Channel-Channel MOSFET, 400 mA, 700 mA, 20 V, 6-Pin SOT-363 Vishay SI1553CDL-T1-GE3

RS kodas: 812-3094Gamintojas: VishayGamintojo kodas: SI1553CDL-T1-GE3
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Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

400 mA, 700 mA

Maximum Drain Source Voltage

20 V

Pakuotės tipas

SOT-363

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

1.48 Ω, 578 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

340 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

2.2mm

Typical Gate Charge @ Vgs

1.2 nC @ 10 V, 1.9 nC @ 10 V

Plotis

1.35mm

Transistor Material

Si

Number of Elements per Chip

2

Aukštis

1mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

Dual N/P-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 0,117

Each (In a Pack of 20) (be PVM)

€ 0,141

Each (In a Pack of 20) (su PVM)

Dual N/P-Channel-Channel MOSFET, 400 mA, 700 mA, 20 V, 6-Pin SOT-363 Vishay SI1553CDL-T1-GE3
Pasirinkite pakuotės tipą
sticker-462

€ 0,117

Each (In a Pack of 20) (be PVM)

€ 0,141

Each (In a Pack of 20) (su PVM)

Dual N/P-Channel-Channel MOSFET, 400 mA, 700 mA, 20 V, 6-Pin SOT-363 Vishay SI1553CDL-T1-GE3
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N, P

Maximum Continuous Drain Current

400 mA, 700 mA

Maximum Drain Source Voltage

20 V

Pakuotės tipas

SOT-363

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

1.48 Ω, 578 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.6V

Maximum Power Dissipation

340 mW

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Maksimali darbinė temperatūra

+150 °C

Ilgis

2.2mm

Typical Gate Charge @ Vgs

1.2 nC @ 10 V, 1.9 nC @ 10 V

Plotis

1.35mm

Transistor Material

Si

Number of Elements per Chip

2

Aukštis

1mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

Dual N/P-Channel MOSFET, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more