P-Channel MOSFET, 1.1 A, 20 V, 3-Pin SOT-323 Vishay SI1317DL-T1-GE3

RS kodas: 812-3066Gamintojas: VishayGamintojo kodas: SI1317DL-T1-GE3
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Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

1.1 A

Maximum Drain Source Voltage

20 V

Pakuotės tipas

SOT-323 (SC-70)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

270 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.45V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

2.2mm

Typical Gate Charge @ Vgs

4.3 nC @ 4.5 V

Plotis

1.35mm

Transistor Material

Si

Minimali darbinė temperatūra

-50 °C

Aukštis

1mm

Produkto aprašymas

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Patikrinkite dar kartą.

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€ 0,132

Už kiekviena vnt. (tiekiama juostoje) (be PVM)

€ 0,16

Už kiekviena vnt. (tiekiama juostoje) (su PVM)

P-Channel MOSFET, 1.1 A, 20 V, 3-Pin SOT-323 Vishay SI1317DL-T1-GE3
Pasirinkite pakuotės tipą
sticker-462

€ 0,132

Už kiekviena vnt. (tiekiama juostoje) (be PVM)

€ 0,16

Už kiekviena vnt. (tiekiama juostoje) (su PVM)

P-Channel MOSFET, 1.1 A, 20 V, 3-Pin SOT-323 Vishay SI1317DL-T1-GE3
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

1.1 A

Maximum Drain Source Voltage

20 V

Pakuotės tipas

SOT-323 (SC-70)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

270 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.45V

Maximum Power Dissipation

500 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-8 V, +8 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

2.2mm

Typical Gate Charge @ Vgs

4.3 nC @ 4.5 V

Plotis

1.35mm

Transistor Material

Si

Minimali darbinė temperatūra

-50 °C

Aukštis

1mm

Produkto aprašymas

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more