N-Channel MOSFET, 1.34 A, 8 V, 6-Pin SOT-523 Vishay SI1050X-T1-GE3

RS kodas: 812-3035Gamintojas: VishayGamintojo kodas: SI1050X-T1-GE3
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Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.34 A

Maximum Drain Source Voltage

8 V

Pakuotės tipas

SOT-523 (SC-89)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.35V

Maximum Power Dissipation

236 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-5 V, +5 V

Plotis

1.2mm

Transistor Material

Si

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

1.7mm

Typical Gate Charge @ Vgs

7.7 nC @ 5 V

Minimali darbinė temperatūra

-55 °C

Aukštis

0.6mm

Produkto aprašymas

N-Channel MOSFET, 8V to 25V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 0,163

Each (In a Pack of 20) (be PVM)

€ 0,197

Each (In a Pack of 20) (su PVM)

N-Channel MOSFET, 1.34 A, 8 V, 6-Pin SOT-523 Vishay SI1050X-T1-GE3
Pasirinkite pakuotės tipą
sticker-462

€ 0,163

Each (In a Pack of 20) (be PVM)

€ 0,197

Each (In a Pack of 20) (su PVM)

N-Channel MOSFET, 1.34 A, 8 V, 6-Pin SOT-523 Vishay SI1050X-T1-GE3
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.34 A

Maximum Drain Source Voltage

8 V

Pakuotės tipas

SOT-523 (SC-89)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

6

Maximum Drain Source Resistance

120 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.35V

Maximum Power Dissipation

236 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-5 V, +5 V

Plotis

1.2mm

Transistor Material

Si

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

1.7mm

Typical Gate Charge @ Vgs

7.7 nC @ 5 V

Minimali darbinė temperatūra

-55 °C

Aukštis

0.6mm

Produkto aprašymas

N-Channel MOSFET, 8V to 25V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more