Vishay N-Channel MOSFET, 200 mA, 20 V, 3-Pin SC-75 SI1032R-T1-GE3

RS kodas: 165-7260Gamintojas: VishayGamintojo kodas: SI1032R-T1-GE3
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

20 V

Pakuotės tipas

SC-75

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

9 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

280 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-6 V, +6 V

Number of Elements per Chip

1

Plotis

0.86mm

Ilgis

1.68mm

Typical Gate Charge @ Vgs

750 nC @ 4.5 V

Transistor Material

Si

Maksimali darbinė temperatūra

+150 °C

Aukštis

0.8mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel MOSFET, 8V to 25V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Sandėlio informacija laikinai nepasiekiama.

€ 410,40

€ 0,137 Each (On a Reel of 3000) (be PVM)

€ 496,58

€ 0,166 Each (On a Reel of 3000) (su PVM)

Vishay N-Channel MOSFET, 200 mA, 20 V, 3-Pin SC-75 SI1032R-T1-GE3
sticker-462

€ 410,40

€ 0,137 Each (On a Reel of 3000) (be PVM)

€ 496,58

€ 0,166 Each (On a Reel of 3000) (su PVM)

Vishay N-Channel MOSFET, 200 mA, 20 V, 3-Pin SC-75 SI1032R-T1-GE3
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

200 mA

Maximum Drain Source Voltage

20 V

Pakuotės tipas

SC-75

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

9 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.4V

Maximum Power Dissipation

280 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-6 V, +6 V

Number of Elements per Chip

1

Plotis

0.86mm

Ilgis

1.68mm

Typical Gate Charge @ Vgs

750 nC @ 4.5 V

Transistor Material

Si

Maksimali darbinė temperatūra

+150 °C

Aukštis

0.8mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel MOSFET, 8V to 25V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more