Dual N/P-Channel-Channel MOSFET, 190 mA, 300 mA, 60 V, 6-Pin SC-89-6 Vishay SI1029X-T1-GE3
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N, P
Maximum Continuous Drain Current
190 mA, 300 mA
Maximum Drain Source Voltage
60 V
Pakuotės tipas
SC-89-6
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
3 Ω, 8 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
250 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+150 °C
Ilgis
1.7mm
Typical Gate Charge @ Vgs
1700 nC @ 15 V, 750 nC @ 4.5 V
Plotis
1.7mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
0.6mm
Produkto aprašymas
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 0,504
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 0,61
Už kiekviena vnt. (tiekiama riteje) (su PVM)
20
€ 0,504
Už kiekviena vnt. (tiekiama riteje) (be PVM)
€ 0,61
Už kiekviena vnt. (tiekiama riteje) (su PVM)
20
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Ritė |
|---|---|---|
| 20 - 180 | € 0,504 | € 10,08 |
| 200 - 480 | € 0,472 | € 9,45 |
| 500 - 980 | € 0,428 | € 8,57 |
| 1000 - 1980 | € 0,403 | € 8,06 |
| 2000+ | € 0,378 | € 7,56 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N, P
Maximum Continuous Drain Current
190 mA, 300 mA
Maximum Drain Source Voltage
60 V
Pakuotės tipas
SC-89-6
Tvirtinimo tipas
Surface Mount
Kaiščių skaičius
6
Maximum Drain Source Resistance
3 Ω, 8 Ω
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
250 mW
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
2
Maksimali darbinė temperatūra
+150 °C
Ilgis
1.7mm
Typical Gate Charge @ Vgs
1700 nC @ 15 V, 750 nC @ 4.5 V
Plotis
1.7mm
Transistor Material
Si
Minimali darbinė temperatūra
-55 °C
Aukštis
0.6mm
Produkto aprašymas
Dual N/P-Channel MOSFET, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products