P-Channel MOSFET, 1.9 A, 200 V, 3-Pin DPAK Vishay IRFR9210TRPBF

RS kodas: 812-0657Gamintojas: VishayGamintojo kodas: IRFR9210TRPBF
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Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

1.9 A

Maximum Drain Source Voltage

200 V

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

3 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Ilgis

6.73mm

Typical Gate Charge @ Vgs

8.9 nC @ 10 V

Number of Elements per Chip

1

Plotis

6.22mm

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Aukštis

2.38mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

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€ 0,24

Už kiekviena vnt. (tiekiama juostoje) (be PVM)

€ 0,29

Už kiekviena vnt. (tiekiama juostoje) (su PVM)

P-Channel MOSFET, 1.9 A, 200 V, 3-Pin DPAK Vishay IRFR9210TRPBF
Pasirinkite pakuotės tipą
sticker-462

€ 0,24

Už kiekviena vnt. (tiekiama juostoje) (be PVM)

€ 0,29

Už kiekviena vnt. (tiekiama juostoje) (su PVM)

P-Channel MOSFET, 1.9 A, 200 V, 3-Pin DPAK Vishay IRFR9210TRPBF
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

1.9 A

Maximum Drain Source Voltage

200 V

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

3 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

25 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Ilgis

6.73mm

Typical Gate Charge @ Vgs

8.9 nC @ 10 V

Number of Elements per Chip

1

Plotis

6.22mm

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Aukštis

2.38mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more