N-Channel MOSFET, 4.3 A, 100 V, 3-Pin DPAK Vishay IRFR110PBF

RS kodas: 540-9581Gamintojas: VishayGamintojo kodas: IRFR110PBF
brand-logo
Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

4.3 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

540 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

8.3 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

6.73mm

Plotis

6.22mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

2.39mm

Produkto aprašymas

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina
N-channel MOSFET,IRFR110 4.3A 100V 75pcs
P.O.A.1 Tube of 75 (be PVM)
N-channel MOSFET,IRFR110 4.3A 100V 75pcs
P.O.A.1 Tube of 75 (be PVM)

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Sandėlio informacija laikinai nepasiekiama.

€ 0,26

už 1 vnt. (be PVM)

€ 0,32

už 1 vnt. (su PVM)

N-Channel MOSFET, 4.3 A, 100 V, 3-Pin DPAK Vishay IRFR110PBF
Pasirinkite pakuotės tipą
sticker-462

€ 0,26

už 1 vnt. (be PVM)

€ 0,32

už 1 vnt. (su PVM)

N-Channel MOSFET, 4.3 A, 100 V, 3-Pin DPAK Vishay IRFR110PBF
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina
N-channel MOSFET,IRFR110 4.3A 100V 75pcs
P.O.A.1 Tube of 75 (be PVM)
N-channel MOSFET,IRFR110 4.3A 100V 75pcs
P.O.A.1 Tube of 75 (be PVM)

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

4.3 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

540 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

8.3 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

6.73mm

Plotis

6.22mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

2.39mm

Produkto aprašymas

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina
N-channel MOSFET,IRFR110 4.3A 100V 75pcs
P.O.A.1 Tube of 75 (be PVM)
N-channel MOSFET,IRFR110 4.3A 100V 75pcs
P.O.A.1 Tube of 75 (be PVM)