N-Channel MOSFET, 7.7 A, 60 V, 3-Pin DPAK Vishay IRFR014PBF

RS kodas: 543-1667Gamintojas: VishayGamintojo kodas: IRFR014PBF
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Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

7.7 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

11 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

6.73mm

Plotis

6.22mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

2.38mm

Produkto aprašymas

N-Channel MOSFET, 60V to 90V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 1,785

Each (In a Pack of 5) (be PVM)

€ 2,16

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 7.7 A, 60 V, 3-Pin DPAK Vishay IRFR014PBF
Pasirinkite pakuotės tipą
sticker-462

€ 1,785

Each (In a Pack of 5) (be PVM)

€ 2,16

Each (In a Pack of 5) (su PVM)

N-Channel MOSFET, 7.7 A, 60 V, 3-Pin DPAK Vishay IRFR014PBF
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
5 - 45€ 1,785€ 8,92
50 - 120€ 1,68€ 8,40
125 - 245€ 1,26€ 6,30
250 - 495€ 1,155€ 5,78
500+€ 1,034€ 5,17

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

7.7 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

DPAK (TO-252)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

200 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

2.5 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

11 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

6.73mm

Plotis

6.22mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

2.38mm

Produkto aprašymas

N-Channel MOSFET, 60V to 90V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more