Vishay N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-247AC IRFPC50PBF

RS kodas: 542-9838Gamintojas: VishayGamintojo kodas: IRFPC50PBF
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

600 V

Pakuotės tipas

TO-247AC

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

180 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

5.31mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

15.87mm

Maksimali darbinė temperatūra

+150 °C

Typical Gate Charge @ Vgs

140 nC @ 10 V

Aukštis

20.7mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 1,33

€ 1,33 už 1 vnt. (be PVM)

€ 1,61

€ 1,61 už 1 vnt. (su PVM)

Vishay N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-247AC IRFPC50PBF
Pasirinkite pakuotės tipą
sticker-462

€ 1,33

€ 1,33 už 1 vnt. (be PVM)

€ 1,61

€ 1,61 už 1 vnt. (su PVM)

Vishay N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-247AC IRFPC50PBF
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

JOIN FOR FREE

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

11 A

Maximum Drain Source Voltage

600 V

Pakuotės tipas

TO-247AC

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

180 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

5.31mm

Transistor Material

Si

Number of Elements per Chip

1

Ilgis

15.87mm

Maksimali darbinė temperatūra

+150 °C

Typical Gate Charge @ Vgs

140 nC @ 10 V

Aukštis

20.7mm

Minimali darbinė temperatūra

-55 °C

Produkto aprašymas

N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina