N-Channel MOSFET, 20 A, 500 V, 3-Pin TO-247AC Vishay IRFP460BPBF

RS kodas: 159-6516Gamintojas: VishayGamintojo kodas: IRFP460BPBF
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Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

500 V

Serija

D Series

Pakuotės tipas

TO-247AC

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

278 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

5.31mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

15.87mm

Typical Gate Charge @ Vgs

85 nC @ 10 V

Aukštis

20.82mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

Produkto aprašymas

N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 3,518

Each (In a Tube of 25) (be PVM)

€ 4,257

Each (In a Tube of 25) (su PVM)

N-Channel MOSFET, 20 A, 500 V, 3-Pin TO-247AC Vishay IRFP460BPBF
sticker-462

€ 3,518

Each (In a Tube of 25) (be PVM)

€ 4,257

Each (In a Tube of 25) (su PVM)

N-Channel MOSFET, 20 A, 500 V, 3-Pin TO-247AC Vishay IRFP460BPBF
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Vamzdelis
25 - 25€ 3,518€ 87,94
50 - 100€ 3,308€ 82,69
125+€ 2,992€ 74,81

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

20 A

Maximum Drain Source Voltage

500 V

Serija

D Series

Pakuotės tipas

TO-247AC

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

278 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

5.31mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

15.87mm

Typical Gate Charge @ Vgs

85 nC @ 10 V

Aukštis

20.82mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

Produkto aprašymas

N-Channel MOSFET, D Series High Voltage, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more