N-Channel MOSFET, 14 A, 500 V, 3-Pin TO-247AC Vishay IRFP450APBF

RS kodas: 543-0030Gamintojas: VishayGamintojo kodas: IRFP450APBF
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Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

14 A

Maximum Drain Source Voltage

500 V

Pakuotės tipas

TO-247AC

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

190 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

64 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

15.87mm

Plotis

5.31mm

Transistor Material

Si

Aukštis

20.7mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

Produkto aprašymas

N-Channel MOSFET, 500V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 5,36

už 1 vnt. (be PVM)

€ 6,48

už 1 vnt. (su PVM)

N-Channel MOSFET, 14 A, 500 V, 3-Pin TO-247AC Vishay IRFP450APBF
Pasirinkite pakuotės tipą
sticker-462

€ 5,36

už 1 vnt. (be PVM)

€ 6,48

už 1 vnt. (su PVM)

N-Channel MOSFET, 14 A, 500 V, 3-Pin TO-247AC Vishay IRFP450APBF
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kaina
1 - 9€ 5,36
10 - 49€ 4,57
50 - 99€ 4,04
100 - 249€ 3,78
250+€ 3,26

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

14 A

Maximum Drain Source Voltage

500 V

Pakuotės tipas

TO-247AC

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

400 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

190 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Typical Gate Charge @ Vgs

64 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

15.87mm

Plotis

5.31mm

Transistor Material

Si

Aukštis

20.7mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

Produkto aprašymas

N-Channel MOSFET, 500V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more