Vishay N-Channel MOSFET, 1.5 A, 100 V, 3-Pin SOT-223 IRFL110TRPBF

RS kodas: 177-7598Gamintojas: VishayGamintojo kodas: IRFL110TRPBF
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.5 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

SOT-223

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

540 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Plotis

3.7mm

Ilgis

6.7mm

Typical Gate Charge @ Vgs

8.3 nC @ 10 V

Transistor Material

Si

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-55 °C

Aukštis

1.8mm

Produkto aprašymas

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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Sandėlio informacija laikinai nepasiekiama.

€ 1 420,25

€ 0,568 Each (On a Reel of 2500) (be PVM)

€ 1 718,50

€ 0,687 Each (On a Reel of 2500) (su PVM)

Vishay N-Channel MOSFET, 1.5 A, 100 V, 3-Pin SOT-223 IRFL110TRPBF
sticker-462

€ 1 420,25

€ 0,568 Each (On a Reel of 2500) (be PVM)

€ 1 718,50

€ 0,687 Each (On a Reel of 2500) (su PVM)

Vishay N-Channel MOSFET, 1.5 A, 100 V, 3-Pin SOT-223 IRFL110TRPBF
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Ideate. Create. Collaborate

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.5 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

SOT-223

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

540 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Plotis

3.7mm

Ilgis

6.7mm

Typical Gate Charge @ Vgs

8.3 nC @ 10 V

Transistor Material

Si

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-55 °C

Aukštis

1.8mm

Produkto aprašymas

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more