N-Channel MOSFET, 14 A, 60 V, 3-Pin TO-220FP Vishay IRFIZ24GPBF
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
14 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
TO-220FP
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
37 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Transistor Material
Si
Typical Gate Charge @ Vgs
25 nC @ 10 V
Minimali darbinė temperatūra
-55 °C
Aukštis
9.8mm
Kilmės šalis
China
Produkto aprašymas
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
€ 1,26
Each (In a Tube of 50) (be PVM)
€ 1,525
Each (In a Tube of 50) (su PVM)
50
€ 1,26
Each (In a Tube of 50) (be PVM)
€ 1,525
Each (In a Tube of 50) (su PVM)
50
Pirkti dideliais kiekiais
| kiekis | Vieneto kaina | Per Vamzdelis |
|---|---|---|
| 50 - 50 | € 1,26 | € 63,00 |
| 100 - 200 | € 1,208 | € 60,38 |
| 250+ | € 1,155 | € 57,75 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
14 A
Maximum Drain Source Voltage
60 V
Pakuotės tipas
TO-220FP
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
100 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
37 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+175 °C
Transistor Material
Si
Typical Gate Charge @ Vgs
25 nC @ 10 V
Minimali darbinė temperatūra
-55 °C
Aukštis
9.8mm
Kilmės šalis
China
Produkto aprašymas
N-Channel MOSFET, 60V to 90V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products