Vishay N-Channel MOSFET, 5.5 A, 600 V, 3-Pin TO-220FP IRFIB6N60APBF
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
5.5 A
Maximum Drain Source Voltage
600 V
Pakuotės tipas
TO-220FP
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
49 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Aukštis
9.8mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 3,28
€ 3,28 už 1 vnt. (be PVM)
€ 3,97
€ 3,97 už 1 vnt. (su PVM)
Standartas
1
€ 3,28
€ 3,28 už 1 vnt. (be PVM)
€ 3,97
€ 3,97 už 1 vnt. (su PVM)
Standartas
1
Sandėlio informacija laikinai nepasiekiama.
Patikrinkite dar kartą.
| kiekis | Vieneto kaina |
|---|---|
| 1 - 9 | € 3,28 |
| 10 - 49 | € 2,76 |
| 50 - 99 | € 2,61 |
| 100 - 249 | € 2,38 |
| 250+ | € 2,04 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Techniniai dokumentai
Specifikacijos
Markė
VishayChannel Type
N
Maximum Continuous Drain Current
5.5 A
Maximum Drain Source Voltage
600 V
Pakuotės tipas
TO-220FP
Tvirtinimo tipas
Through Hole
Kaiščių skaičius
3
Maximum Drain Source Resistance
750 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
60 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
49 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
1
Maksimali darbinė temperatūra
+150 °C
Aukštis
9.8mm
Minimali darbinė temperatūra
-55 °C
Produkto aprašymas
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products