P-Channel MOSFET, 3.8 A, 60 V, 3-Pin TO-220FP Vishay IRFI9Z14GPBF

RS kodas: 145-1873Gamintojas: VishayGamintojo kodas: IRFI9Z14GPBF
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Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.8 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

TO-220FP

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

500 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

27 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Plotis

4.83mm

Ilgis

10.63mm

Typical Gate Charge @ Vgs

12 nC @ 10 V

Maksimali darbinė temperatūra

+175 °C

Transistor Material

Si

Aukštis

16.12mm

PRICED TO CLEAR

Yes

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

Produkto aprašymas

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 0,351

Each (In a Tube of 50) (be PVM)

€ 0,425

Each (In a Tube of 50) (su PVM)

P-Channel MOSFET, 3.8 A, 60 V, 3-Pin TO-220FP Vishay IRFI9Z14GPBF
sticker-462

€ 0,351

Each (In a Tube of 50) (be PVM)

€ 0,425

Each (In a Tube of 50) (su PVM)

P-Channel MOSFET, 3.8 A, 60 V, 3-Pin TO-220FP Vishay IRFI9Z14GPBF
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

3.8 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

TO-220FP

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

500 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

27 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Plotis

4.83mm

Ilgis

10.63mm

Typical Gate Charge @ Vgs

12 nC @ 10 V

Maksimali darbinė temperatūra

+175 °C

Transistor Material

Si

Aukštis

16.12mm

PRICED TO CLEAR

Yes

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

Produkto aprašymas

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more