P-Channel MOSFET, 4.1 A, 250 V, 3-Pin TO-220FP Vishay IRFI9634GPBF

RS kodas: 145-1620Gamintojas: VishayGamintojo kodas: IRFI9634GPBF
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Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

4.1 A

Maximum Drain Source Voltage

250 V

Pakuotės tipas

TO-220FP

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

38 nC @ 10 V

Number of Elements per Chip

1

Aukštis

9.8mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

Produkto aprašymas

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 2,152

Each (In a Tube of 50) (be PVM)

€ 2,604

Each (In a Tube of 50) (su PVM)

P-Channel MOSFET, 4.1 A, 250 V, 3-Pin TO-220FP Vishay IRFI9634GPBF
sticker-462

€ 2,152

Each (In a Tube of 50) (be PVM)

€ 2,604

Each (In a Tube of 50) (su PVM)

P-Channel MOSFET, 4.1 A, 250 V, 3-Pin TO-220FP Vishay IRFI9634GPBF
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Vamzdelis
50 - 50€ 2,152€ 107,62
100 - 200€ 1,838€ 91,88
250+€ 1,732€ 86,62

Ideate. Create. Collaborate

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

4.1 A

Maximum Drain Source Voltage

250 V

Pakuotės tipas

TO-220FP

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

35 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Typical Gate Charge @ Vgs

38 nC @ 10 V

Number of Elements per Chip

1

Aukštis

9.8mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

Produkto aprašymas

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more