N-Channel MOSFET, 4 A, 200 V, 3-Pin TO-220FP Vishay IRFI620GPBF

RS kodas: 145-1683Gamintojas: VishayGamintojo kodas: IRFI620GPBF
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Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

200 V

Pakuotės tipas

TO-220FP

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Transistor Material

Si

Typical Gate Charge @ Vgs

16 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

Produkto aprašymas

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 1,838

Each (In a Tube of 50) (be PVM)

€ 2,224

Each (In a Tube of 50) (su PVM)

N-Channel MOSFET, 4 A, 200 V, 3-Pin TO-220FP Vishay IRFI620GPBF
sticker-462

€ 1,838

Each (In a Tube of 50) (be PVM)

€ 2,224

Each (In a Tube of 50) (su PVM)

N-Channel MOSFET, 4 A, 200 V, 3-Pin TO-220FP Vishay IRFI620GPBF
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Vamzdelis
50 - 50€ 1,838€ 91,88
100 - 200€ 1,732€ 86,62
250+€ 1,68€ 84,00

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

4 A

Maximum Drain Source Voltage

200 V

Pakuotės tipas

TO-220FP

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

1 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

30 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-10 V, +10 V

Transistor Material

Si

Typical Gate Charge @ Vgs

16 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

Produkto aprašymas

N-Channel MOSFET, 200V to 250V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more