P-Channel MOSFET, 1.6 A, 60 V, 4-Pin HVMDIP Vishay IRFD9020PBF

RS kodas: 145-1912Gamintojas: VishayGamintojo kodas: IRFD9020PBF
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Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

1.6 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

HVMDIP

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

4

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

5mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Transistor Material

Si

Ilgis

6.29mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Aukštis

3.37mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

6.3V

Kilmės šalis

Philippines

Produkto aprašymas

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 1,418

Each (In a Tube of 100) (be PVM)

€ 1,716

Each (In a Tube of 100) (su PVM)

P-Channel MOSFET, 1.6 A, 60 V, 4-Pin HVMDIP Vishay IRFD9020PBF
sticker-462

€ 1,418

Each (In a Tube of 100) (be PVM)

€ 1,716

Each (In a Tube of 100) (su PVM)

P-Channel MOSFET, 1.6 A, 60 V, 4-Pin HVMDIP Vishay IRFD9020PBF
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Vamzdelis
100 - 100€ 1,418€ 141,75
200 - 400€ 1,365€ 136,50
500+€ 1,312€ 131,25

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

1.6 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

HVMDIP

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

4

Maximum Drain Source Resistance

280 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Plotis

5mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Transistor Material

Si

Ilgis

6.29mm

Typical Gate Charge @ Vgs

19 nC @ 10 V

Aukštis

3.37mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

6.3V

Kilmės šalis

Philippines

Produkto aprašymas

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more