N-Channel MOSFET, 1.3 A, 100 V, 4-Pin HVMDIP Vishay IRFD120PBF

RS kodas: 541-1691Gamintojas: VishayGamintojo kodas: IRFD120PBF
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Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

HVMDIP

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

4

Maximum Drain Source Resistance

270 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

16 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

5mm

Plotis

6.29mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

3.37mm

Kilmės šalis

Philippines

Produkto aprašymas

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 1,58

už 1 vnt. (be PVM)

€ 1,91

už 1 vnt. (su PVM)

N-Channel MOSFET, 1.3 A, 100 V, 4-Pin HVMDIP Vishay IRFD120PBF
sticker-462

€ 1,58

už 1 vnt. (be PVM)

€ 1,91

už 1 vnt. (su PVM)

N-Channel MOSFET, 1.3 A, 100 V, 4-Pin HVMDIP Vishay IRFD120PBF
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kaina
1 - 9€ 1,58
10 - 49€ 1,42
50 - 99€ 1,36
100 - 249€ 1,21
250+€ 1,05

Ideate. Create. Collaborate

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design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

1.3 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

HVMDIP

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

4

Maximum Drain Source Resistance

270 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

16 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

5mm

Plotis

6.29mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

3.37mm

Kilmės šalis

Philippines

Produkto aprašymas

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more