N-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP Vishay IRFD110PBF

RS kodas: 541-1039Gamintojas: VishayGamintojo kodas: IRFD110PBF
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Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

HVMDIP

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

4

Maximum Drain Source Resistance

540 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Typical Gate Charge @ Vgs

8.3 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

5mm

Plotis

6.29mm

Minimali darbinė temperatūra

-55 °C

Aukštis

3.37mm

Produkto aprašymas

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 1,78

už 1 vnt. (be PVM)

€ 2,15

už 1 vnt. (su PVM)

N-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP Vishay IRFD110PBF
Pasirinkite pakuotės tipą
sticker-462

€ 1,78

už 1 vnt. (be PVM)

€ 2,15

už 1 vnt. (su PVM)

N-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP Vishay IRFD110PBF
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kaina
1 - 9€ 1,78
10 - 49€ 1,47
50 - 99€ 1,36
100 - 249€ 1,26
250+€ 1,21

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

1 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

HVMDIP

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

4

Maximum Drain Source Resistance

540 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Typical Gate Charge @ Vgs

8.3 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

5mm

Plotis

6.29mm

Minimali darbinė temperatūra

-55 °C

Aukštis

3.37mm

Produkto aprašymas

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more