N-Channel MOSFET, 2.5 A, 60 V, 4-Pin HVMDIP Vishay IRFD024PBF

RS kodas: 541-0525Gamintojas: VishayGamintojo kodas: IRFD024PBF
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

HVMDIP

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

4

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

25 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

5mm

Plotis

6.29mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

3.37mm

Produkto aprašymas

N-Channel MOSFET, 60V to 90V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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N-channel MOSFET,IRFD024 2.5A 60V
P.O.A.už 1 vnt. (be PVM)

Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Sandėlio informacija laikinai nepasiekiama.

€ 1,52

už 1 vnt. (be PVM)

€ 1,84

už 1 vnt. (su PVM)

N-Channel MOSFET, 2.5 A, 60 V, 4-Pin HVMDIP Vishay IRFD024PBF
sticker-462

€ 1,52

už 1 vnt. (be PVM)

€ 1,84

už 1 vnt. (su PVM)

N-Channel MOSFET, 2.5 A, 60 V, 4-Pin HVMDIP Vishay IRFD024PBF
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina
N-channel MOSFET,IRFD024 2.5A 60V
P.O.A.už 1 vnt. (be PVM)

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

2.5 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

HVMDIP

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

4

Maximum Drain Source Resistance

100 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

1.3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

25 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

5mm

Plotis

6.29mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

3.37mm

Produkto aprašymas

N-Channel MOSFET, 60V to 90V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
Galbūt jus domina
N-channel MOSFET,IRFD024 2.5A 60V
P.O.A.už 1 vnt. (be PVM)