P-Channel MOSFET, 18 A, 60 V, 3-Pin TO-220AB Vishay IRF9Z34PBF

RS kodas: 145-1789Gamintojas: VishayGamintojo kodas: IRF9Z34PBF
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Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

TO-220AB

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

140 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

88 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maksimali darbinė temperatūra

+175 °C

Transistor Material

Si

Ilgis

10.41mm

Typical Gate Charge @ Vgs

34 nC @ 10 V

Plotis

4.7mm

Number of Elements per Chip

1

Minimali darbinė temperatūra

-55 °C

Aukštis

9.01mm

Kilmės šalis

China

Produkto aprašymas

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 2,048

Each (In a Tube of 50) (be PVM)

€ 2,478

Each (In a Tube of 50) (su PVM)

P-Channel MOSFET, 18 A, 60 V, 3-Pin TO-220AB Vishay IRF9Z34PBF
sticker-462

€ 2,048

Each (In a Tube of 50) (be PVM)

€ 2,478

Each (In a Tube of 50) (su PVM)

P-Channel MOSFET, 18 A, 60 V, 3-Pin TO-220AB Vishay IRF9Z34PBF
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Vamzdelis
50 - 50€ 2,048€ 102,38
100 - 200€ 1,942€ 97,12
250+€ 1,838€ 91,88

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

18 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

TO-220AB

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

140 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

88 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Maksimali darbinė temperatūra

+175 °C

Transistor Material

Si

Ilgis

10.41mm

Typical Gate Charge @ Vgs

34 nC @ 10 V

Plotis

4.7mm

Number of Elements per Chip

1

Minimali darbinė temperatūra

-55 °C

Aukštis

9.01mm

Kilmės šalis

China

Produkto aprašymas

P-Channel MOSFET, 30V to 80V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more