Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
200 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
9.65mm
Transistor Material
Si
Typical Gate Charge @ Vgs
44 nC @ 10 V
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+150 °C
Height
4.83mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel MOSFET, 100V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 98.75
€ 3.95 Each (Supplied in a Tube) (Exc. Vat)
€ 119.49
€ 4.78 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
25

€ 98.75
€ 3.95 Each (Supplied in a Tube) (Exc. Vat)
€ 119.49
€ 4.78 Each (Supplied in a Tube) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Tube)
25

Stock information temporarily unavailable.
| Quantity | Unit price | Per Tube |
|---|---|---|
| 25 - 45 | € 3.95 | € 19.75 |
| 50 - 120 | € 3.75 | € 18.75 |
| 125 - 245 | € 3.50 | € 17.50 |
| 250+ | € 3.25 | € 16.25 |
Technical Document
Specifications
Brand
VishayChannel Type
P
Maximum Continuous Drain Current
11 A
Maximum Drain Source Voltage
200 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
500 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
9.65mm
Transistor Material
Si
Typical Gate Charge @ Vgs
44 nC @ 10 V
Number of Elements per Chip
1
Length
10.41mm
Maximum Operating Temperature
+150 °C
Height
4.83mm
Minimum Operating Temperature
-55 °C
Product details



