P-Channel MOSFET, 12 A, 100 V, 3-Pin TO-220AB Vishay IRF9530PBF

RS kodas: 708-5159Gamintojas: VishayGamintojo kodas: IRF9530PBF
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Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

TO-220AB

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

300 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

88 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

38 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

10.41mm

Plotis

4.7mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

9.01mm

Kilmės šalis

China

Produkto aprašymas

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 2,10

Each (In a Pack of 5) (be PVM)

€ 2,541

Each (In a Pack of 5) (su PVM)

P-Channel MOSFET, 12 A, 100 V, 3-Pin TO-220AB Vishay IRF9530PBF
Pasirinkite pakuotės tipą
sticker-462

€ 2,10

Each (In a Pack of 5) (be PVM)

€ 2,541

Each (In a Pack of 5) (su PVM)

P-Channel MOSFET, 12 A, 100 V, 3-Pin TO-220AB Vishay IRF9530PBF
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
5 - 45€ 2,10€ 10,50
50 - 120€ 1,785€ 8,92
125 - 245€ 1,68€ 8,40
250 - 495€ 1,575€ 7,88
500+€ 1,47€ 7,35

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

P

Maximum Continuous Drain Current

12 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

TO-220AB

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

300 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

88 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

38 nC @ 10 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

10.41mm

Plotis

4.7mm

Transistor Material

Si

Minimali darbinė temperatūra

-55 °C

Aukštis

9.01mm

Kilmės šalis

China

Produkto aprašymas

P-Channel MOSFET, 100V to 400V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more