Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
500 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
38 nC @ 10 V
Width
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.67mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
4.83mm
Country of Origin
China
Product details
N-Channel MOSFET, 500V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
€ 62.50
€ 1.25 Each (Supplied in a Tube) (Exc. Vat)
€ 75.62
€ 1.512 Each (Supplied in a Tube) (inc. VAT)
Production pack (Tube)
50

€ 62.50
€ 1.25 Each (Supplied in a Tube) (Exc. Vat)
€ 75.62
€ 1.512 Each (Supplied in a Tube) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Tube)
50

Stock information temporarily unavailable.
| Quantity | Unit price | Per Tube |
|---|---|---|
| 50 - 120 | € 1.25 | € 6.25 |
| 125 - 245 | € 1.15 | € 5.75 |
| 250 - 495 | € 1.00 | € 5.00 |
| 500+ | € 0.874 | € 4.37 |
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
8 A
Maximum Drain Source Voltage
500 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Typical Gate Charge @ Vgs
38 nC @ 10 V
Width
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.67mm
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
4.83mm
Country of Origin
China
Product details


