N-Channel MOSFET, 8 A, 500 V, 3-Pin TO-220AB Vishay IRF840APBF

RS kodas: 542-9440Gamintojas: VishayGamintojo kodas: IRF840APBF
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Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

500 V

Pakuotės tipas

TO-220AB

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

850 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

10.41mm

Plotis

4.7mm

Transistor Material

Si

Typical Gate Charge @ Vgs

38 nC @ 10 V

Minimali darbinė temperatūra

-55 °C

Aukštis

9.01mm

Kilmės šalis

China

Produkto aprašymas

N-Channel MOSFET, 500V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 2,47

už 1 vnt. (be PVM)

€ 2,99

už 1 vnt. (su PVM)

N-Channel MOSFET, 8 A, 500 V, 3-Pin TO-220AB Vishay IRF840APBF
sticker-462

€ 2,47

už 1 vnt. (be PVM)

€ 2,99

už 1 vnt. (su PVM)

N-Channel MOSFET, 8 A, 500 V, 3-Pin TO-220AB Vishay IRF840APBF
Sandėlio informacija laikinai nepasiekiama.
sticker-462

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kiekisVieneto kaina
1 - 9€ 2,47
10 - 49€ 2,15
50 - 99€ 2,05
100 - 249€ 1,94
250+€ 1,78

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
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Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

8 A

Maximum Drain Source Voltage

500 V

Pakuotės tipas

TO-220AB

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

850 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

125 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Ilgis

10.41mm

Plotis

4.7mm

Transistor Material

Si

Typical Gate Charge @ Vgs

38 nC @ 10 V

Minimali darbinė temperatūra

-55 °C

Aukštis

9.01mm

Kilmės šalis

China

Produkto aprašymas

N-Channel MOSFET, 500V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more