N-Channel MOSFET, 5 A, 500 V, 3-Pin D2PAK Vishay IRF830ASPBF

RS kodas: 145-1758Gamintojas: VishayGamintojo kodas: IRF830ASPBF
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Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

500 V

Pakuotės tipas

D2PAK (TO-263)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

1.4 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

10.67mm

Typical Gate Charge @ Vgs

24 nC @ 10 V

Plotis

9.65mm

Minimali darbinė temperatūra

-55 °C

Aukštis

4.83mm

Produkto aprašymas

N-Channel MOSFET, 500V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 0,665

Each (In a Tube of 50) (be PVM)

€ 0,805

Each (In a Tube of 50) (su PVM)

N-Channel MOSFET, 5 A, 500 V, 3-Pin D2PAK Vishay IRF830ASPBF
sticker-462

€ 0,665

Each (In a Tube of 50) (be PVM)

€ 0,805

Each (In a Tube of 50) (su PVM)

N-Channel MOSFET, 5 A, 500 V, 3-Pin D2PAK Vishay IRF830ASPBF
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

500 V

Pakuotės tipas

D2PAK (TO-263)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

1.4 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

10.67mm

Typical Gate Charge @ Vgs

24 nC @ 10 V

Plotis

9.65mm

Minimali darbinė temperatūra

-55 °C

Aukštis

4.83mm

Produkto aprašymas

N-Channel MOSFET, 500V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more