Vishay N-Channel MOSFET, 10 A, 400 V, 3-Pin D2PAK IRF740SPBF
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
400 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
63 nC @ 10 V
Width
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.67mm
Maximum Operating Temperature
+150 °C
Height
4.83mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 300V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
€ 22.50
€ 2.25 Each (Supplied on a Reel) (Exc. Vat)
€ 27.22
€ 2.72 Each (Supplied on a Reel) (inc. VAT)
Production pack (Reel)
10
€ 22.50
€ 2.25 Each (Supplied on a Reel) (Exc. Vat)
€ 27.22
€ 2.72 Each (Supplied on a Reel) (inc. VAT)
Stock information temporarily unavailable.
Production pack (Reel)
10
Stock information temporarily unavailable.
| Quantity | Unit price |
|---|---|
| 10 - 49 | € 2.25 |
| 50 - 99 | € 2.15 |
| 100 - 249 | € 2.00 |
| 250+ | € 1.60 |
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products
Technical Document
Specifications
Brand
VishayChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
400 V
Package Type
D2PAK (TO-263)
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
550 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
2V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
63 nC @ 10 V
Width
9.65mm
Transistor Material
Si
Number of Elements per Chip
1
Length
10.67mm
Maximum Operating Temperature
+150 °C
Height
4.83mm
Minimum Operating Temperature
-55 °C
Product details
N-Channel MOSFET, 300V to 400V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products