N-Channel MOSFET, 5.6 A, 100 V, 3-Pin TO-220AB Vishay IRF510PBF

RS kodas: 708-5134Gamintojas: VishayGamintojo kodas: IRF510PBF
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Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

5.6 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

TO-220AB

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

540 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

43 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

10.41mm

Plotis

4.7mm

Transistor Material

Si

Typical Gate Charge @ Vgs

8.3 nC @ 10 V

Minimali darbinė temperatūra

-55 °C

Aukštis

9.01mm

Produkto aprašymas

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

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€ 1,522

Each (In a Pack of 10) (be PVM)

€ 1,842

Each (In a Pack of 10) (su PVM)

N-Channel MOSFET, 5.6 A, 100 V, 3-Pin TO-220AB Vishay IRF510PBF
Pasirinkite pakuotės tipą
sticker-462

€ 1,522

Each (In a Pack of 10) (be PVM)

€ 1,842

Each (In a Pack of 10) (su PVM)

N-Channel MOSFET, 5.6 A, 100 V, 3-Pin TO-220AB Vishay IRF510PBF
Sandėlio informacija laikinai nepasiekiama.
Pasirinkite pakuotės tipą
sticker-462

Pirkti dideliais kiekiais

kiekisVieneto kainaPer Pakuotė
10 - 90€ 1,522€ 15,22
100 - 240€ 1,155€ 11,55
250 - 490€ 0,959€ 9,59
500 - 990€ 0,852€ 8,52
1000+€ 0,62€ 6,20

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay

Channel Type

N

Maximum Continuous Drain Current

5.6 A

Maximum Drain Source Voltage

100 V

Pakuotės tipas

TO-220AB

Tvirtinimo tipas

Through Hole

Kaiščių skaičius

3

Maximum Drain Source Resistance

540 mΩ

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

43 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Ilgis

10.41mm

Plotis

4.7mm

Transistor Material

Si

Typical Gate Charge @ Vgs

8.3 nC @ 10 V

Minimali darbinė temperatūra

-55 °C

Aukštis

9.01mm

Produkto aprašymas

N-Channel MOSFET, 100V to 150V, Vishay Semiconductor

MOSFET Transistors, Vishay Semiconductor

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more