N-Channel MOSFET, 250 A, 40 V, 7-Pin D2PAK Vishay Siliconix SQM40016EM_GE3

RS kodas: 178-3723Gamintojas: Vishay SiliconixGamintojo kodas: SQM40016EM_GE3
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Žiūrėti viską MOSFET

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

250 A

Maximum Drain Source Voltage

40 V

Serija

TrenchFET

Pakuotės tipas

D2PAK (TO-263)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

7

Maximum Drain Source Resistance

1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Plotis

4.83mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Transistor Material

Si

Ilgis

10.67mm

Typical Gate Charge @ Vgs

163 nC @ 10 V

Aukštis

11.3mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.5V

Automotive Standard

AEC-Q101

Kilmės šalis

Taiwan, Province Of China

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€ 1 292,00

€ 1,615 Each (On a Reel of 800) (be PVM)

€ 1 563,32

€ 1,954 Each (On a Reel of 800) (su PVM)

N-Channel MOSFET, 250 A, 40 V, 7-Pin D2PAK Vishay Siliconix SQM40016EM_GE3
sticker-462

€ 1 292,00

€ 1,615 Each (On a Reel of 800) (be PVM)

€ 1 563,32

€ 1,954 Each (On a Reel of 800) (su PVM)

N-Channel MOSFET, 250 A, 40 V, 7-Pin D2PAK Vishay Siliconix SQM40016EM_GE3
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

250 A

Maximum Drain Source Voltage

40 V

Serija

TrenchFET

Pakuotės tipas

D2PAK (TO-263)

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

7

Maximum Drain Source Resistance

1 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

3.5V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Plotis

4.83mm

Number of Elements per Chip

1

Maksimali darbinė temperatūra

+175 °C

Transistor Material

Si

Ilgis

10.67mm

Typical Gate Charge @ Vgs

163 nC @ 10 V

Aukštis

11.3mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.5V

Automotive Standard

AEC-Q101

Kilmės šalis

Taiwan, Province Of China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more