N-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23 Vishay Siliconix SQ2364EES-T1_GE3

RS kodas: 178-3708Gamintojas: Vishay SiliconixGamintojo kodas: SQ2364EES-T1_GE3
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Techniniai dokumentai

Specifikacijos

Markė

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SOT-23

Serija

TrenchFET

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.46V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Maksimali darbinė temperatūra

+175 °C

Transistor Material

Si

Ilgis

3.04mm

Typical Gate Charge @ Vgs

2 nC @ 4.5 V

Plotis

1.4mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Aukštis

1.02mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

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Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

Sandėlio informacija laikinai nepasiekiama.

€ 0,27

Each (On a Reel of 3000) (be PVM)

€ 0,327

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23 Vishay Siliconix SQ2364EES-T1_GE3

3000

Galima įsigyti kartotiną kiekį 3000
3000€ 809,55
6000€ 1 619,10
9000€ 2 428,65
12000€ 3 238,20
15000€ 4 047,75
18000€ 4 857,30
21000€ 5 666,85
24000€ 6 476,40
27000€ 7 285,95
30000€ 8 095,50
33000€ 8 905,05
36000€ 9 714,60
39000€ 10 524,15
42000€ 11 333,70
45000€ 12 143,25
sticker-462

€ 0,27

Each (On a Reel of 3000) (be PVM)

€ 0,327

Each (On a Reel of 3000) (su PVM)

N-Channel MOSFET, 2 A, 60 V, 3-Pin SOT-23 Vishay Siliconix SQ2364EES-T1_GE3
Sandėlio informacija laikinai nepasiekiama.

3000

Galima įsigyti kartotiną kiekį 3000
3000€ 809,55
6000€ 1 619,10
9000€ 2 428,65
12000€ 3 238,20
15000€ 4 047,75
18000€ 4 857,30
21000€ 5 666,85
24000€ 6 476,40
27000€ 7 285,95
30000€ 8 095,50
33000€ 8 905,05
36000€ 9 714,60
39000€ 10 524,15
42000€ 11 333,70
45000€ 12 143,25
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay Siliconix

Channel Type

N

Maximum Continuous Drain Current

2 A

Maximum Drain Source Voltage

60 V

Pakuotės tipas

SOT-23

Serija

TrenchFET

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

3

Maximum Drain Source Resistance

600 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.46V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

3 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±8 V

Maksimali darbinė temperatūra

+175 °C

Transistor Material

Si

Ilgis

3.04mm

Typical Gate Charge @ Vgs

2 nC @ 4.5 V

Plotis

1.4mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Automotive Standard

AEC-Q101

Aukštis

1.02mm

Minimali darbinė temperatūra

-55 °C

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more