Dual N-Channel MOSFET, 40 (Channnel 1) A, 60 (Channel 2) A, 30 V, 8-Pin PowerPAIR 6 x 5 Vishay Siliconix

RS kodas: 178-3705Gamintojas: Vishay SiliconixGamintojo kodas: SIZF916DT-T1-GE3
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Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

40 (Channnel 1) A, 60 (Channel 2) A

Maximum Drain Source Voltage

30 V

Serija

TrenchFET

Pakuotės tipas

PowerPAIR 6 x 5

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

2.4V

Maximum Power Dissipation

26.6 W, 60 W

Maximum Gate Source Voltage

+16 V, +20 V, -12 V, -16 V

Plotis

6mm

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

5mm

Typical Gate Charge @ Vgs

14.6 (Channel 1) nC @ 10 V, 62 (Channel 2) nC @ 10 V

Aukštis

0.7mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

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€ 0,865

Each (On a Reel of 3000) (be PVM)

€ 1,047

Each (On a Reel of 3000) (su PVM)

Dual N-Channel MOSFET, 40 (Channnel 1) A, 60 (Channel 2) A, 30 V, 8-Pin PowerPAIR 6 x 5 Vishay Siliconix
sticker-462

€ 0,865

Each (On a Reel of 3000) (be PVM)

€ 1,047

Each (On a Reel of 3000) (su PVM)

Dual N-Channel MOSFET, 40 (Channnel 1) A, 60 (Channel 2) A, 30 V, 8-Pin PowerPAIR 6 x 5 Vishay Siliconix
Sandėlio informacija laikinai nepasiekiama.
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Channel Type

N

Maximum Continuous Drain Current

40 (Channnel 1) A, 60 (Channel 2) A

Maximum Drain Source Voltage

30 V

Serija

TrenchFET

Pakuotės tipas

PowerPAIR 6 x 5

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

6 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1.1V

Minimum Gate Threshold Voltage

2.4V

Maximum Power Dissipation

26.6 W, 60 W

Maximum Gate Source Voltage

+16 V, +20 V, -12 V, -16 V

Plotis

6mm

Number of Elements per Chip

2

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Ilgis

5mm

Typical Gate Charge @ Vgs

14.6 (Channel 1) nC @ 10 V, 62 (Channel 2) nC @ 10 V

Aukštis

0.7mm

Minimali darbinė temperatūra

-55 °C

Forward Diode Voltage

1.2V

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more