P-Channel MOSFET, 35 A, 30 V, 8-Pin 1212 Vishay Siliconix SiSH617DN-T1-GE3

RS kodas: 178-3697Gamintojas: Vishay SiliconixGamintojo kodas: SiSH617DN-T1-GE3
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Techniniai dokumentai

Specifikacijos

Markė

Vishay Siliconix

Channel Type

P

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

1212

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

52 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Plotis

3.15mm

Number of Elements per Chip

1

Ilgis

3.15mm

Typical Gate Charge @ Vgs

39 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Serija

TrenchFET

Minimali darbinė temperatūra

-55 °C

Aukštis

1.07mm

Forward Diode Voltage

1.2V

Kilmės šalis

China

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Sandėlio informacija laikinai nepasiekiama.

Patikrinkite dar kartą.

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€ 0,303

Each (On a Reel of 3000) (be PVM)

€ 0,367

Each (On a Reel of 3000) (su PVM)

P-Channel MOSFET, 35 A, 30 V, 8-Pin 1212 Vishay Siliconix SiSH617DN-T1-GE3

3000

Galima įsigyti kartotiną kiekį 3000
3000€ 910,35
6000€ 1 820,70
9000€ 2 731,05
12000€ 3 641,40
15000€ 4 551,75
18000€ 5 462,10
21000€ 6 372,45
24000€ 7 282,80
27000€ 8 193,15
30000€ 9 103,50
33000€ 10 013,85
36000€ 10 924,20
39000€ 11 834,55
42000€ 12 744,90
45000€ 13 655,25
sticker-462

€ 0,303

Each (On a Reel of 3000) (be PVM)

€ 0,367

Each (On a Reel of 3000) (su PVM)

P-Channel MOSFET, 35 A, 30 V, 8-Pin 1212 Vishay Siliconix SiSH617DN-T1-GE3
Sandėlio informacija laikinai nepasiekiama.

3000

Galima įsigyti kartotiną kiekį 3000
3000€ 910,35
6000€ 1 820,70
9000€ 2 731,05
12000€ 3 641,40
15000€ 4 551,75
18000€ 5 462,10
21000€ 6 372,45
24000€ 7 282,80
27000€ 8 193,15
30000€ 9 103,50
33000€ 10 013,85
36000€ 10 924,20
39000€ 11 834,55
42000€ 12 744,90
45000€ 13 655,25
sticker-462

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Techniniai dokumentai

Specifikacijos

Markė

Vishay Siliconix

Channel Type

P

Maximum Continuous Drain Current

35 A

Maximum Drain Source Voltage

30 V

Pakuotės tipas

1212

Tvirtinimo tipas

Surface Mount

Kaiščių skaičius

8

Maximum Drain Source Resistance

20 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.5V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

52 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±25 V

Plotis

3.15mm

Number of Elements per Chip

1

Ilgis

3.15mm

Typical Gate Charge @ Vgs

39 nC @ 10 V

Maksimali darbinė temperatūra

+150 °C

Transistor Material

Si

Serija

TrenchFET

Minimali darbinė temperatūra

-55 °C

Aukštis

1.07mm

Forward Diode Voltage

1.2V

Kilmės šalis

China

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more